STT3922N 4.1a, 20v, r ds(on) 47m ? n-channel enhancement mode power mosfet elektronische bauelemente 22-jun-2012 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low rds(on) and to ensure minimal power loss and heat dissipation. typ ical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, and pcmcia cards, cellular and cordless telephones. features low on-resistance low drive current low r ds(on) provides higher efficiency and extends battery life fast switching speed high performance trench technology package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current 1 t a = 25 c i d 4.1 a t a = 70 c 3.3 pulsed drain current 2 i dm 8 a continuous source current (diode conduction) 1 i s 1.05 a power dissipation 1 t a = 25 c p d 1.15 w t a = 70 c 0.7 operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 1 t 10 sec Q r ja 110 c / w steady state 150 notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. g g s s d d ref. millimeter ref. millimeter min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 2 3 4 5 6
STT3922N 4.1a, 20v, r ds(on) 47m ? n-channel enhancement mode power mosfet elektronische bauelemente 22-jun-2012 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 0.4 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 1 a v ds =0, v gs =8v zero gate voltage drain current i dss - - 0.1 a v ds =16v, v gs =0 - - 1 v ds =16v, v gs =0, t j = 55 c on-state drain current 1 i d(on) 30 - - a v ds =5v, v gs =4.5v drain-source on-resistance 1 r ds(on) - - 47 m v gs =4.5v, i d =4.1a - - 55 v gs =2.5v, i d =3.8a forward transconductance 1 g fs - 10 - s v ds =10v, i d =4.1a diode forward voltage v sd - 0.8 - v i s =1.05a, v gs =0 dynamic 2 total gate charge q g - 7.5 - nc v ds =10v, v gs =4.5v, i d =4.1a gate-source charge q gs - 0.6 - gate-drain charge q gd - 1 - turn-on delay time t d(on) - 5 - ns v dd =10v, v gs =4.5v, i d =1a, r gne =15 rise time t r - 12 - turn-off delay time t d(off) - 13 - fall time t f - 7 - notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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